| PART |
Description |
Maker |
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| S7878 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| HUF76145S3S HUF76145P3 FN4401 |
From old datasheet system
75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
| STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package
N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET
N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics
STMicroelectronics
|
